SUD50P04-08-GE3

SUD50P04-08-GE3 datasheet

Маркировка

SUD50P04-08-GE3
Производитель

Siliconix
Описание

Vishay Intertechnology SUD50P04-08-GE3 Configuration: Single Continuous Drain Current: - 50 A Current - Continuous Drain (id) @ 25?° C: 50A Drain Source Voltage Vds: -40V Drain To Source Voltage (vdss): 40V Fet Feature: Standard Fet Type: MOSFET P-Channel, Metal Oxide Forward Transconductance Gfs (max / Min): 45 S Gate Charge (qg) @ Vgs: 159nC @ 10V ID_COMPONENTS: 1716357 Input Capacitance (ciss) @ Vds: 5380pF @ 20V Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount On Resistance Rds(on): 6.7mohm Operating Temperature Range: -55?‚?°C To +150?‚?°C Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Power - Max: 2.5W Power Dissipation: 73.5 W Rds On (max) @ Id, Vgs: 8.1 mOhm @ 22A, 10V Rds(on) Test Voltage Vgs: -10V Resistance Drain-source Rds (on): 0.0067 Ohms Rohs Compliant: Yes Series: TrenchFET?® Transistor: RoHS Compliant Transistor Case Style: TO-252 Transistor Polarity: P Channel Vgs(th) (max) @ Id: 2.5V @ 250?µA Voltage Vgs Max: 20V RoHS: yes Resistance Drain-Source RDS (on): 0.0067 Ohms Forward Transconductance gFS (Max / Min): 45 S Other Names: SUD50P04-08-GE3TR
Количество страниц

8 шт.
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